Schottky Barrier Diode - ROHM
Description
RB218NS100
Schottky Barrier Diode
●Outline
VR 100 V
Io 20 A
IFSM 100 A
●Features High reliability Power mold type Cathode common dual type Super Low IR
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
RB218NS100
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.
5
110 V
Reverse voltage Average rectified forward current Peak forward surge current Junction temperature
VR Reverse direct voltage
100 V
Io IFSM
60Hz half sin waveform，resistive load， Io/2 per diode，Tc=115℃Max.
60Hz half sin waveform， non-repetitive，per diode，Ta=25℃
20 100
A A
Tj -
150 ℃
Storage temperature
Tstg -
-55 ～ 150
℃
Attention
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rohm.
com © 2018- ROHMCo.
, Ltd.
All rights reserved.
1/6 2019/05/27_Rev.
003
RB218NS100
Data sheet
●Electrical Characteristics Parameter
Forward voltage(1) Reverse current(1)
Note (1) Value per diode
(Tj=25ºC unless otherwise specified)
Symbol
Conditions
VF IF=10A
IR VR=100V
Min.
Typ.
Max.
Unit - - 0.
87 V - - 7 μA
●Thermal Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Thermal Resistance (Junction to case)(1) (2)
Per diode Per device
RθJC
-
- 1.
1 ℃/W - 0.
67 ℃/W
Thermal Resistance (Junction to ambient)(1) (3)
Notes (1) Value is guaranteed by design.
RθJA - - 55 ℃/W
(2) Transient dual interface measurement (TDIM) method.
(3) Mounted on 50 x 50 x 1.
6mm FR4 board，single-sided copper，35μm thickness，reference footprint.
●Characteristic Curves
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rohm.
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