Schottky Barrier Diode - ROHM
Description
Schottky Barrier Diode
RB218NS-40
Data Sheet
lApplication Switching power supply
lFeatures 1) Cathode common dual type 2) High reliability 3) Super low IR
lDimensions (Unit : mm)
(2)
RB218 NS40
1
(1) (3)
3.
5 2.
5 8.
5
16
lLand size figure (Unit : mm)
11
9.
9 2.
5
2.
54
TO-263S
2.
54
lStructure
(2) Cathode
lConstruction Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83 ①1 : Manufacture date
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.
5
45 V
Reverse voltage Average forward rectified current
Non-repetitive forward current surge peak
Operating junction temperature
VR Io IFSM Tj
Direct reverse voltage
60Hz half sin wave, resistive load, IO/2 per diode, Tc=115ºC Max.
60Hz half sin wave, Non-repetitive at Ta=25ºC , 1cycle, per diode
-
40 V 20 A 100 A 150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal C...
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