Part Number
|
RB215T-90NZ |
Manufacturer
|
ROHM |
Published
|
Mar 29, 2017 |
Description
|
Schottky Barrier Diode |
Datasheet
|
RB215T-90NZ PDF File
|
Overview
Schottky barrier diode
RB215T-90NZ
Applications General rectification (Common cathode dual chip)
Dimensions (Unit : mm)
10.
0±0.
3 0.
1
4.
5±0.
3 0.
1
2.
8±0.
2 0.
1
Features 1) Small power mold type.
(TO-220) 2) Low IR 3) High reliability
Construction Silicon epitaxial planar
RB215
①
T-90
1.
2
1.
3
0.
8 (1) (2) (3)
5.
0±0.
2 8.
0±0.
2 12.
0±0.
2
13.
5MIN 15.
0±0.
4 0.
2
8.
0
0.
7±0.
1 0.
05
2.
6±0.
5
ROHM : TO220FN ① Manufacture Date
Data Sheet
Structure
(1) (2) (3)
●Packing Dimensions (Unit : mm) 7
540
34.
5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
VRM 90
Reverse voltage (DC)
VR 90
Average rectified forward current(*1) Io 20
Forward current surge peak (60Hz/1cyc) (*1) Junction temperature
IFSM Tj
100 150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=110C
Electrical characteristic (Ta=25C) Parameter
...
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