Schottky Barrier Diode - ROHM
Description
Schottky barrier diode
RB215T-40NZ
Applications Switching power supply
Dimensions (Unit : mm)
Features 1) Cathode common dual type.
(TO-220) 2) Low IR 3) High reliability
Construction Silicon epitaxial planar
215 4
Data Sheet
Structure
(1) (2) (3)
●Packing Dimensions (Unit : mm) 7
540
34.
5
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1)
VRM VR Io
Forward current surge peak (60Hz/1cyc) (*1) Junction temperature
IFSM Tj
Storage temperature
Tstg
(*1)Business frequencies, 1/2 Io per diode, Tc=121C
Limits 45 40 20 100 150
40 to 150
Electrical characteristic (Ta=25C) Parameter
Forward voltage Reverse current Thermal impedance
Symbol VF IR jc
Min.
Typ.
Max.
- - 0.
55 - - 500 - - 1.
75
Unit V V A A
C C
Unit V μA
C/W
Conditions
IF=10A VR=40V junction to case
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