Schottky Barrier Diode - ROHM
Description
Schottky barrier dio de
RB205T-60NZ
Applications Switching power supply
Dimensions (Unit : mm)
Features 1) Cathode common type.
(TO-220) 2) Low IR 3) High reliability
Construction Silicon epitaxial planer
205 6
Data Sheet
Structure
(1) (2) (3)
●Packing Dimensions (Unit : mm) 7
540
34.
5
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1)
VRM 60 VR 60 Io 15
Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature
IFSM Tj
100 150
Storage temperature
Tstg 40 to 150
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=125C
Electrical characteristic (Ta=25°C) Parameter
Forward voltage Reverse current Thermal impedance
Symbol Min.
Typ.
Max.
VF - - 0.
58 IR - - 600 jc - - 2
Unit V V A A C C
Unit V A
C/W
Conditions
IF=7.
5A VR=60V junction to case
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