Silicon PNP Power Transistor - INCHANGE
Description
isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -150mA ·Complement to Type BD933F/935F/937F/939F/941F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in output stages of audio and television
amplifier circuits where high peak powers can occur.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD934F
-45
BD936F
-60
VCBO
Collector-Base Voltage BD938F
-100
BD940F
-120
BD942F
-140
BD934F
-45
BD936F
-60
VCEO
Collector-Emitter Voltage BD938F
-80
BD940F
-100
BD942F
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-3
ICM
Collector Current-Peak
-7
IB
Base Current-Continuous
-0.
5
PC
Collector Power Dissipation @ TC=25℃
19
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
4.
17 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
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isc Silicon PNP Power Transistor BD934F/936F/938F/940F/942F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD934F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD936F BD938F IC= -30mA ; IB= 0 BD940F
BD942F
VCE(sat) VBE(on)
ICBO ICEO
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.
1A
Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current
IC= -1A; VCE= -2V
VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃
VCE= VCEOmax; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -150mA ; VCE= -2V
hFE-2
DC Current Gain
IC= -1A ; VCE= -2V
MIN TYP.
MAX UNIT
45
60
80
V
100
120
-0.
6 V
-1.
3 V
-0.
05 -1.
0
mA
-0.
1 mA
-0.
2 mA
40
250
25
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