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WFU6N70

Winsemi
Part Number WFU6N70
Manufacturer Winsemi
Description Power MOSFET
Published Mar 26, 2017
Detailed Description WFU6N70 Silicon N-Channel MOSFET Features ■ 6A,700V, RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51nC) ■...
Datasheet PDF File WFU6N70 PDF File

WFU6N70
WFU6N70

Overview
WFU6N70 Silicon N-Channel MOSFET Features ■ 6A,700V, RDS(on)(Max 1.
5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain ...


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