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WFU1N60C

Winsemi
Part Number WFU1N60C
Manufacturer Winsemi
Description Power MOSFET
Published Mar 26, 2017
Detailed Description WFU1N60C Product Description Silicon N-Channel MOSFET Features � 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate c...
Datasheet PDF File WFU1N60C PDF File

WFU1N60C
WFU1N60C

Overview
WFU1N60C Product Description Silicon N-Channel MOSFET Features � 1.
2A,600V, RDS(on)(Max8.
5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.
1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description Th is Power MOSFET is produced using Winsemi ’ s advanced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuo...


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