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WFF2N60

Winsemi
Part Number WFF2N60
Manufacturer Winsemi
Description Power MOSFET
Published Mar 26, 2017
Detailed Description WFF2N60 Silicon N-Channel MOSFET Features ■2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fa...
Datasheet PDF File WFF2N60 PDF File

WFF2N60
WFF2N60

Overview
WFF2N60 Silicon N-Channel MOSFET Features ■2A,600V, RDS(on)(Max 5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.
0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Parameter Drain Source Voltage Continuous Drain...


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