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K2611B

Part Number	K2611B
Manufacturer	Winsemi
Description	Silicon N-Channel MOSFET
Published	Mar 26, 2017
Detailed Description	K2611B Product Description Silicon N-Channel MOSFET Features � 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate cha...
Datasheet	K2611B PDF File

Overview

K2611B Product Description Silicon N-Channel MOSFET Features � 11A,900V, RDS(on)(Max1.
10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability � RoHS product General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
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