■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
WFP50N06
Silicon N-Channel MOSFET
General Description
This PowerMOSFET is produced usin...