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■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced plan...

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