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DMN2008LFU

Diodes
Part Number DMN2008LFU
Manufacturer Diodes
Description DUAL N-CHANNEL MOSFET
Published Mar 15, 2017
Detailed Description Product Summary BVDSS 20V RDS(ON) Max 5.4mΩ @ VGS = 4.5V 6.2mΩ @ VGS = 4.0V 6.4mΩ @ VGS = 3.7V 7.5mΩ @ VGS = 3.1V 9.6m...
Datasheet PDF File DMN2008LFU PDF File

DMN2008LFU
DMN2008LFU

Overview
Product Summary BVDSS 20V RDS(ON) Max 5.
4mΩ @ VGS = 4.
5V 6.
2mΩ @ VGS = 4.
0V 6.
4mΩ @ VGS = 3.
7V 7.
5mΩ @ VGS = 3.
1V 9.
6mΩ @ VGS = 2.
5V ID TA = +25°C 14.
5A 13.
5A 13.
0A 12.
0A 10.
5A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) , yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications  Power Management Functions  Battery Pack  Load Switch DMN2008LFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  H...


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