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AP50G60SW

Advanced Power Electronics
Part Number AP50G60SW
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 12, 2017
Detailed Description Advanced Power Electronics Corp. AP50G60SW RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features...
Datasheet PDF File AP50G60SW PDF File

AP50G60SW
AP50G60SW

Overview
Advanced Power Electronics Corp.
AP50G60SW RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.
=2.
6V@IC=33A ▼ Built-in Fast Recovery Diode G C E C VCES IC TO-3P G Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp.
for Soldering Purposes , 1/8" from case for 5 seconds .
...


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