DatasheetsPDF.com

HMC637ALP5E

Part Number	HMC637ALP5E
Manufacturer	Analog Devices
Description	GaAs pHEMT MMIC 1-WATT POWER AMPLIFIER
Published	Mar 5, 2017
Detailed Description	Data Sheet GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz HMC637ALP5E FEATURES P1dB output power: 29 dBm Gai...
Datasheet	HMC637ALP5E PDF File

Overview

Data Sheet GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.
1 GHz to 6 GHz HMC637ALP5E FEATURES P1dB output power: 29 dBm Gain: 13 dB Output IP3: 44 dBm 50 Ω matched input/output 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2 APPLICATIONS Telecom infrastructure Microwave radio Very small aperture terminal (VSAT) Military and space Test instrumentation Fiber optics GENERAL DESCRIPTION The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.
1 GHz and 6 GHz.
The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output ...

Similar Datasheet

HMC637ALP5E GaAs pHEMT MMIC 1-WATT POWER AMPLIFIER - Analog Devices

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)