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1EDN7511B

Infineon
Part Number 1EDN7511B
Manufacturer Infineon
Description high speed Superjunction MOSFET
Published Feb 22, 2017
Detailed Description EiceDRIVER™ 1EDN751x/1EDN851x Features Fast, Precise, Strong and Compatible • 5 ns slew rate to support high speed Supe...
Datasheet PDF File 1EDN7511B PDF File

1EDN7511B
1EDN7511B

Overview
EiceDRIVER™ 1EDN751x/1EDN851x Features Fast, Precise, Strong and Compatible • 5 ns slew rate to support high speed Superjunction MOSFET (like CoolMos™ C7) or GaN devices • 19 ns propagation delay precision for fast MOSFET and GaN switching • 8 A sink and 4 A source driver capability enables fast switching for very high efficiency applications and powers low ohmic MOSFET • Industry standard packages and pinout ease system-design upgrades The New Reference in Ruggedness • 4.
2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET protection under abnormal conditions • -10 V input voltage capability delivers robustness and crucial safety margin when device is driven from pulse- transformers • 5 A reverse current robustness eliminates the need for output protection circuitry Applications • Server SMPS (Switch Mode Power Supplies) • TeleCom SMPS • DC-to-DC Converter • Bricks • Power Tools • Industrial SMPS • Motor Control Example Topologies • Synchronous Rectification • Power Factor Correction PFC (DCM, CCM) • LLC, ZVS in combination with pulse transformer for isolation Description The 1EDN7x/1EDN8x is an advanced single-channel driver.
It is suited to drive logic and normal level MOSFETs and supports OptiMOSTM, CoolMOSTM, Standard Level MOSFETs, Superjunction MOSFETs, as well as IGBTs and GaN Power devices.
Data Sheet Please read the Important Notice and Warnings at the end of this document www.
infineon.
com/1EDN Rev.
2.
2 2018-04-20 EiceDRIVER™ 1EDN751x/1EDN851x Description The control and enable inputs are LV-TTL compatible (CMOS 3.
3 V) with an input voltage range from -5 V to +20 V.
-10 V input pin robustness protects the driver against latch-up or electrical overstress which can be induced by parasitic ground inductances.
This greatly enhances system stability.
4.
2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET and GaN protection under abnormal conditions.
Under such circumstances, this UVLO mechanism provides crucial indepe...


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