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CJND2007

JCET
Part Number CJND2007
Manufacturer JCET
Description Dual N-Channel MOSFET
Published Feb 22, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS CJND2007 V(BR)DSS 20V   D...
Datasheet PDF File CJND2007 PDF File

CJND2007
CJND2007

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD DFNWB5×2-6L-A Plastic-Encapsulate MOSFETS CJND2007 V(BR)DSS 20V   Dual N-Channel MOSFET RDS(on)MAX  20mΩ@10V 22mΩ @4.
5V 24 mΩ@3.
8V 26mΩ@2.
5V 35mΩ@1.
8V ID   7A   DFNWB5×2-6L-A DESCRIPTION The CJND2007 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.
MARKING: Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient(note1) Thermal Resistance from Junction to Ambient(note2) Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited by junction temperature.
Note：1.
When mounted on a minim...


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