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CJL6602

JCET
Part Number CJL6602
Manufacturer JCET
Description P-channel and N-channel Complementary MOSFETS
Published Feb 22, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6602 P-channel and N-channe...
Datasheet PDF File CJL6602 PDF File

CJL6602
CJL6602

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6602 P-channel and N-channel Complementary MOSFETS P-channel V(BR)DSS -30V RDS(on)MAX 135 mΩ@-10V  185mΩ@-4.
5V 265mΩ@-2.
5V ID -2.
3A  N-channel V(BR)DSS 30V RDS(on)MAX 60mΩ@10V  75mΩ@4.
5V 115mΩ@2.
5V ID 3.
4A  SOT-23-6L GENERAL DESCRIPTION The CJL6602 uses advanced trench technology to provide excellent RDS(on) and low gate charge.
The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.
MARKING Equivalent Circuit L6602 Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS N-channel 30 Value P-channel -30 Unit V Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current (2) VGS ±12 ID 3.
4 IDM 30 ±12 -2.
3 -30 V A A Power Dissipation PD 0.
35 0.
35 W Thermal Resistance from Junction to Ambient(1) RθJA 357 357 ℃/W Junction Temperature TJ 150 150 ℃ Storage Temp...


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