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CJCD2005

JCET
Part Number CJCD2005
Manufacturer JCET
Description Dual N-Channel MOSFET
Published Feb 22, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2005 V(BR)DSS   20V D...
Datasheet PDF File CJCD2005 PDF File

CJCD2005
CJCD2005

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS CJCD2005 V(BR)DSS   20V Dual N-Channel MOSFET RDS(on)MAX  13mΩ@10V 14mΩ @4.
5V 15.
5mΩ@3.
8V 19 mΩ@2.
5V 27mΩ@1.
8V ID   8A   DFNWB2× -6L-C DESCRIPTION The CJCD2005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration.
MARKING: Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) *Repetitive rating：Pluse width limited by junction temperature.
Symbol VDS VGS ID IDM * RθJA Tj Tstg TL Value 20 ±12 8 30 125 150 -55~+150 260 Unit V V A A...


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