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CJ5853DCB

JCET
Part Number CJ5853DCB
Manufacturer JCET
Description P-channel MOSFET and Schottky Barrier Diode
Published Feb 22, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DCB P-channel...
Datasheet PDF File CJ5853DCB PDF File

CJ5853DCB
CJ5853DCB

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DCB P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR -20V 20V RDS(on)MAX 110mΩ@-4.
5V 160mΩ@-2.
5V 240mΩ@-1.
8V  / ID/IO -2.
7A  0.
5A   DFNWB3×2-08L-B FEATURE z Independent Pinout to Each Device to Ease Circuit Design z Ultra low V F z Featuring a MOSFET and a Schottky Barrier Diode MARKING APPLICATION z Li-lon Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable， Battery Powered Products Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter P-MOSFET VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM* Pulse Drain Current Schottky Barrier Diode VRRM Peak Repetitive Reverse Voltage VR DC Blocking Voltage IO Average Rectified Forward Current Power Dissipation, Temperature and Thermal Resistance PD Power Dissipati...


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