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6R125P

Infineon
Part Number 6R125P
Manufacturer Infineon
Description Power Transistor
Published Feb 22, 2017
Detailed Description CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High...
Datasheet PDF File 6R125P PDF File

6R125P
6R125P


Overview
CoolMOSTM Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPB60R125CP 650 V 0.
125 Ω 53 nC PG-TO263 CoolMOS CP is specially designed for: • Hard switching topologies, for Server and Telecom Type IPB60R125CP Package PG-TO263 Ordering Code SP000088488 Marking 6R125P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness ID I D,pulse E AS E AR I AR dv /dt T C=25 °C T C=100 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V V DS=0.
.
.
480 V Gate source voltage V GS static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Value 25 16 82 708 1.
2 11 50 ±20 ±30 208 -55 .
.
.
150 Unit A mJ A V/ns V W °C Rev.
1.
0 Rev.
1.
1 page 1 Page 1 2007-02-06 2018-03-28 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Symbol Conditions IS I S,pulse T C=25 °C Reverse diode dv /dt 4) dv /dt IPB60R125CP Value 16 82 15 Unit A V/ns Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA Soldering temperature, wave- & reflowsoldering allowed T sold SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area5) reflow MSL1 Electrical characteristics, at T j=25 °C, unless otherwise specified - - - 0.
6 K/W - 62 35 - 260 °C Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source l...


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