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TC58BVG0S3HBAI6

Part Number	TC58BVG0S3HBAI6
Manufacturer	Toshiba
Description	1G-BIT (128M x 8 BIT) CMOS NAND E2PROM
Published	Feb 16, 2017
Detailed Description	TC58BVG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58BVG0S3HBAI6 PDF File

Overview

...TION The TC58BVG0S3HBAI6 is a single 3.
3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58BVG0S3HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the devi...

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