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TC58BVG2S0HBAI6

Part Number	TC58BVG2S0HBAI6
Manufacturer	Toshiba
Description	4G-BIT (512M x 8 BIT) CMOS NAND E2PROM
Published	Feb 16, 2017
Detailed Description	TC58BVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TC58BVG2S0HBAI6 PDF File

Overview

...TION The TC58BVG2S0HBAI6 is a single 3.
3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TC58BVG2S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the dev...

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