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TH58NVG4S0HTAK0

Part Number	TH58NVG4S0HTAK0
Manufacturer	Toshiba
Description	16G-BIT (2G x 8 BIT) CMOS NAND E2PROM
Published	Feb 15, 2017
Detailed Description	TH58NVG4S0HTAK0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G  8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet	TH58NVG4S0HTAK0 PDF File

Overview

TH58NVG4S0HTAK0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G  8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0HTAK0 is a single 3.
3V 16 Gbit (18,253,611,008 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  8192blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes  16 Kbytes: 4352 bytes  64 pages).
The TH58NVG4S0HTAK0 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-densi...

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