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TC58NVG2S0HBAI6

Toshiba
Part Number TC58NVG2S0HBAI6
Manufacturer Toshiba
Description 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM
Published Feb 15, 2017
Detailed Description TC58NVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIP...
Datasheet PDF File TC58NVG2S0HBAI6 PDF File

TC58NVG2S0HBAI6
TC58NVG2S0HBAI6

Overview
TC58NVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S0HBAI6 is a single 3.
3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).
The TC58NVG2S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-vol...


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