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20N50

OGFD
Part Number 20N50
Manufacturer OGFD
Description N-Channel MOSFETS
Published Feb 15, 2017
Detailed Description N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density...
Datasheet PDF File 20N50 PDF File

20N50
20N50

Overview
N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
20N50 V DSS RDS(ON ) ID 500V 0.
26Ω 20A TO-3P Features • 20.
0A,500V,RDS(ON)=0.
26 Ω@VGS=10V • Low gate charge (typical 70Nc) • Fast switching • 100% avalanche tested • Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 20N50 TO-3P 0GFD www.
goford.
cn TEL：0755-86350980 FAX：0755-86350963 Absolute Maximum Ratings (TC=25℃, unless otherwise noted) 20N50 Symbol Parameter 20N50 Units VDSS ID IDM PD VGS EAS dv/dt TJ and TSTG Drain-to-Source Voltage Continuous Drain Current Pulsed Drain...


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