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ET-20N50

Part Number	ET-20N50
Manufacturer	ESTEK
Description	N-Channel MOSFET
Published	Feb 15, 2017
Detailed Description	Features ■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100...
Datasheet	ET-20N50 PDF File

Overview

Features ■ RDS(on) (Max 0.
26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol 1.
Gate{ { 2.
Drain ● ◀▲ ● ● { 3.
Source General Description This Power MOSFET is manufactured advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-247 G DS Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recov...

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ET-20N50 N-Channel MOSFET - ESTEK

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