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2N5551

Part Number	2N5551
Manufacturer	Motorola
Description	Amplifier Transistors
Published	Feb 13, 2017
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 ...
Datasheet	2N5551 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5550 2N5551 140 160 160 180 6.
0 600 625 5.
0 1.
5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W ...

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