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ASJD1200R085

Micross
Part Number ASJD1200R085
Manufacturer Micross
Description Normally-ON Trench Silicon Carbide Power JFET
Published Feb 10, 2017
Detailed Description ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET FEATURES: Die Inside • Herme...
Datasheet PDF File ASJD1200R085 PDF File

ASJD1200R085
ASJD1200R085

Overview
ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET FEATURES: Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory) • Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions • Inherent Radiation Tolerance >100K TID • Positive Temperature Coefficient for Ease of Paralleling • Extremely Fast Switching with No “Tail” Current at 150°C • 1200 Volt Drain-Source Blocking Voltage • RDS(on)max of 0.
085  • Voltage Controlled 4 • Low Gate Charge • Low Intrinsic Capacitance ProductSummary BVDS 1200 RDS(ON)max 0.
085 ETS,typ TBD V : μJ D (2,4) G (1) APPLIC...


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