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PD6F8BA

Part Number	PD6F8BA
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 7, 2017
Detailed Description	PD6F8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 3.3mΩ @VGS = 10V ID 117A TO-252 AB...
Datasheet	PD6F8BA PDF File

Overview

PD6F8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 3.
3mΩ @VGS = 10V ID 117A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 117 74 200 Avalanche Current IAS 75 Avalanche Energy L = 0.
1mH EAS 281 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction ...

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PD6F8BA N-Channel MOSFET - UNIKC

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