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PD563BA

Part Number	PD563BA
Manufacturer	UNIKC
Description	P-Channel MOSFET
Published	Feb 7, 2017
Detailed Description	PD563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -46A TO-252 ...
Datasheet	PD563BA PDF File

Overview

PD563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -46A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current3 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM -46 -29 -130 Avalanche Current IAS -34 Avalanche Energy L = 0.
1mH EAS 57.
8 Power Dissipation TC= 25 °C TC= 100°C PD 62.
5 25 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum jun...

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PD563BA P-Channel MOSFET - UNIKC

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