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P75N02LDG

UNIKC
Part Number P75N02LDG
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 7, 2017
Detailed Description P75N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 5mΩ @VGS = 10V ID 75A TO-252 ABS...
Datasheet PDF File P75N02LDG PDF File

P75N02LDG
P75N02LDG


Overview
P75N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 5mΩ @VGS = 10V ID 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 75 50 170 Avalanche Current IAS 45 Avalanche Energy L = 0.
1mH EAS 100 Power Dissipation TC = 25 °C TC = 100 °C PD 54 32.
75 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.
) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA RqCS TYPICAL 0.
6 MAXIMUM 2.
3 62.
5 UNITS °C / W Ver 1.
1 1 2013-3-13 P75N02LDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C Unless Otherwise Noted) PARAMETER SYMBOL TEST CO...


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