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P1820HDB

Part Number	P1820HDB
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 6, 2017
Detailed Description	P1820HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 157mΩ @VGS = 10V ID 18A TO-252 ...
Datasheet	P1820HDB PDF File

Overview

P1820HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 157mΩ @VGS = 10V ID 18A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 18 9 30 Avalanche Current IAS 12 Avalanche Energy L = 1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temp...

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