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P3606HK

UNIKC
Part Number P3606HK
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description P3606HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 38mΩ @VGS = 10V ID 15A PDFN 5*...
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P3606HK
P3606HK

Overview
P3606HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 38mΩ @VGS = 10V ID 15A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C 15 ID 10 IDM 40 Continuous Drain Current TA = 25 °C TA = 70 °C 5 ID 4 Avalanche Current IAS 18.
6 Avalanche Energy L = 0.
1mH EAS 17.
3 Power Dissipation TC = 25 °C TC = 100 °C 20.
8 PD 8 Power Dissipation TA = 25 °C TA = 70 °C 2.
3 PD 1.
5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C...


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