MOSFET - UNIKC
Description
P0603BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 30A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
TC = 25 °C(Package Limited) TC = 25 °C(Silicon Limited)
ID
30 80
Pulsed Drain Current1
TC = 100 °C
50 IDM 150
Continuous Drain Current2
TA = 25 °C TA = 70 °C
16 ID 13
Avalanche Current
IAS 47
Avalanche Energy
L = 0.
1mH
EAS 112
Power Dissipation
TC = 25 °C TC = 100 °C
62.
5 PD 25
Power Dissipation
TA = 25 °C TA = 70 °C
2.
5 PD 1.
6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
SYMBOL RqJC RqJA
Ver 1.
0
1
TYPICAL
MAXIMUM 2 50
U...
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