MOSFET - UNIKC
Description
P0603BEAD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.
8mΩ @VGS = 10V
ID 56A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
56
Continuous Drain Current1,2
TC = 100 °C TA = 25 °C
ID
35 14.
5
Pulsed Drain Current1
TA = 70 °C
IDM
11.
6 100
Avalanche Current
IAS 38
Avalanche Energy
L = 0.
1mH
EAS
72
TC = 25 °C
31
Power Dissipation
TC = 100 °C TA = 25 °C
PD
12 2.
1
TA = 70 °C
1.
3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV 1.
0
1 2014/6/18
P0603BEAD
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3 Junction-to-Case
RqJA RqJC
60 °C / W
3.
5
1Pulse width limited by maximum junction temperature.
2Package limitation current is 27A.
3The value of RqJA is ...
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