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PE606DT

UNIKC
Part Number PE606DT
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description PE606DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 11mΩ @VGS = 10V Q1 30V 16mΩ ...
Datasheet PDF File PE606DT PDF File

PE606DT
PE606DT

Overview
PE606DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 11mΩ @VGS = 10V Q1 30V 16mΩ @VGS = 10V ID 30A 23A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 30 17 40 Continuous Drain Current TA = 25 °C TA = 70 °C ID 9.
4 7.
5 Avalanche Current IAS 17 Avalanche Energy L = 0.
1mH EAS 14 Power Dissipation TC = 25 °C TC = 100 °C PD 19 7.
6 Power Dissipation TA = 25 °C TA = 70 °C PD 1.
8 1.
1 Operating Junction & Storage Temperature Range TJ, Tst...


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