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PB560DZ

UNIKC
Part Number PB560DZ
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description PB560DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 26mΩ @VGS = 4.5V ID 7.8A PDFN ...
Datasheet PDF File PB560DZ PDF File

PB560DZ
PB560DZ

Overview
PB560DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 26mΩ @VGS = 4.
5V ID 7.
8A PDFN 2X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA = 70 °C ID IDM 7.
8 6.
2 40 Avalanche Current IAS 10 Avalanche Energy3 EAS 4.
9 Power Dissipation TA = 25 °C TA= 70 °C PD 2.
4 1.
5 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 52 1Pulse width limited by ...


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