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PB5G8JW

UNIKC
Part Number PB5G8JW
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description PB5G8JW Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 35mΩ @VGS = 4.5V ID 5A PDFN 2X...
Datasheet PDF File PB5G8JW PDF File

PB5G8JW
PB5G8JW

Overview
PB5G8JW Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 35mΩ @VGS = 4.
5V ID 5A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 5 3.
9 20 Power Dissipation TA = 25 °C TA = 70 °C PD 1.
4 0.
9 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured wi...


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