DatasheetsPDF.com

PV563BA

Part Number	PV563BA
Manufacturer	UNIKC
Description	P-Channel MOSFET
Published	Feb 3, 2017
Detailed Description	PV563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -9.5A SOP- 08...
Datasheet	PV563BA PDF File

Overview

PV563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -9.
5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -9.
5 -7.
6 -40 Avalanche Current IAS -32 Avalanche Energy L=0.
1mH EAS 53 Power Dissipation3 TA = 25 °C TA = 70 °C PD 3 2 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s...

Similar Datasheet

PV563BA P-Channel MOSFET - UNIKC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)