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PV555BA

Part Number	PV555BA
Manufacturer	UNIKC
Description	P-Channel MOSFET
Published	Feb 3, 2017
Detailed Description	PV555BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 28mΩ @VGS = -10V ID -6A SOP- 08 ...
Datasheet	PV555BA PDF File

Overview

PV555BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 28mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -6 -4.
7 -24 Avalanche Current IAS -19.
3 Avalanche Energy L=0.
1mH EAS 18.
6 Power Dissipation TA = 25 °C TA = 70 °C PD 1.
7 1.
1 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 72 1Pulse width l...

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PV555BA P-Channel MOSFET - UNIKC

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