N-Channel MOSFET - UNIKC
Description
P0603BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 16A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
16 13 70
Avalanche Current
IAS 48
Avalanche Energy
L = 0.
1mH
EAS
113
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.
5 1.
6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL MAXIMUM UNITS 50 °C / W
Ver 1.
0
1 2012/5/16
P0603BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage...
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