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P5803NAG

UNIKC
Part Number P5803NAG
Manufacturer UNIKC
Description N&P-Channel MOSFET
Published Feb 3, 2017
Detailed Description P5803NAG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 58mΩ @VGS = 10V -30V 115mΩ @VGS ...
Datasheet PDF File P5803NAG PDF File

P5803NAG
P5803NAG

Overview
P5803NAG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 58mΩ @VGS = 10V -30V 115mΩ @VGS = -10V ID Channel 3A N -2A P TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH.
LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70 °C N3 P -2 ID N 2.
3 P -1.
6 Pulsed Drain Current1 N 30 IDM P -10 Power Dissipation TA = 25 °C TA = 70 °C N 0.
8 P 0.
8 PD N 0.
5 P 0.
5 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RqJA 1Pulse widt...


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