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P8010BD

UNIKC
Part Number P8010BD
Manufacturer UNIKC
Description N-Channel Transistor
Published Feb 1, 2017
Detailed Description P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 15A TO-252 AB...
Datasheet PDF File P8010BD PDF File

P8010BD
P8010BD

Overview
P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C VGS ID IDM IAS ±20 15 9 35 12 Avalanche Energy L =0.
1mH EAS 7.
2 MOSFET dV/dt Ruggedness Peak Diode Recovery dV/dt2 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C dV/dt PD TJ, Tstg 16.
2 4.
1 46 18 -55 to 150 UNITS V V A mJ V/nS W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case...


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