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THN6501

AUK
Part Number THN6501
Manufacturer AUK
Description SiGe NPN Transistor
Published Jan 30, 2017
Detailed Description Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.0 dB at f =...
Datasheet PDF File THN6501 PDF File

THN6501
THN6501

Overview
Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.
0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA THN6501 Series SiGe NPN Transistor SOT-523 Unit in mm □ hFE Classification Marking AB1 AB2 hFE 125 to 300 80 to 160 □ Absolute Maximum Ratings Symbol Parameter VCBO Collector to Base Breakdown Voltage VCEO Collector to Emitter Breakdown Voltage VEBO Emitter to Base Breakdown Voltage Ic Collector Current (DC) PT Total Power Dissipation TSTG Storage Temperature TJ Operating Junction Temperature Caution : ...


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