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P8315ATF

UNIKC
Part Number P8315ATF
Manufacturer UNIKC
Description N-Channel MOSFET
Published Jan 29, 2017
Detailed Description P8315ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 83mΩ @VGS = 10V ID 13.5A TO-220F...
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P8315ATF
P8315ATF


Overview
P8315ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 83mΩ @VGS = 10V ID 13.
5A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 13.
5 8.
5 50 Avalanche Current IAS 17 Avalanche Energy2 EAS 163 Power Dissipation TC = 25 °C TC = 100 °C PD 35 14 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Starting Tj =25 °C,IAS=17A,L=1.
1mH,VDD=50V SYMBOL RqJC RqJA TYPICAL MAXIMUM 3.
6 62.
5 UNITS °C / W REV 1.
0 1 2014/7/9 P8315ATF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS ...


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