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FQH35N40

Fairchild Semiconductor
Part Number FQH35N40
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 16, 2017
Detailed Description FQH35N40 400V N-Channel MOSFET FQH35N40 400V N-Channel MOSFET Features • 35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V • Low ...
Datasheet PDF File FQH35N40 PDF File

FQH35N40
FQH35N40

Overview
FQH35N40 400V N-Channel MOSFET FQH35N40 400V N-Channel MOSFET Features • 35A, 400V, RDS(on) = 0.
105Ω @VGS = 10 V • Low gate charge ( typical 110 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability July 2005 QFET® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic...


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