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FQA8N100C

Fairchild Semiconductor
Part Number FQA8N100C
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 16, 2017
Detailed Description FQA8N100C — N-Channel QFET® MOSFET FQA8N100C N-Channel QFET® MOSFET 1000 V, 8 A, 1.45 Ω Features • RDS(on) = 1.45 Ω (Ma...
Datasheet PDF File FQA8N100C PDF File

FQA8N100C
FQA8N100C

Overview
FQA8N100C — N-Channel QFET® MOSFET FQA8N100C N-Channel QFET® MOSFET 1000 V, 8 A, 1.
45 Ω Features • RDS(on) = 1.
45 Ω (Max.
) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ.
53 nC) • Low Crss (Typ.
16 pF) • 100% Avalanche Tested March 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies.
D G D S TO-3PN G S Absolute M...


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