MOSFET - Fairchild Semiconductor
Description
FDP032N08B — N-Channel PowerTrench® MOSFET
FDP032N08B
N-Channel PowerTrench® MOSFET
80 V, 211 A, 3.
3 mΩ
November 2013
Features
• RDS(on) = 2.
85 mΩ (Typ.
) @ VGS = 10 V, ID = 50 A • Low FOM RDS(on) * QG • Low Reverse-Recovery Charge, Qrr • Soft Reverse-Recovery Body Diode • Enables High Efficiency in Synchronous Rectification • Fast Switching Speed • 100% UIL Tested • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Renewable System
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
TJ, TSTG TL
Parameter
Drain to Source Voltage
Gate to Source Voltage Dra...
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