250V/5.5A N-Channel Power MOSFET - TAITRON
Description
250V/5.
5A N-Channel Power MOSFET (Discontinued)
IRFS634 SAMSUNG
General Description
Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
TO-220F
Features
VDSS=250V, ID=5.
5A RDS(ON) ≤ 0.
45 Ω @ VGS=10V
Pin Configuration
1: Gate 2: Drain 3: Source TO-220F
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Rev.
A/PQ Page 1 of 10
IRFS634
SAMSUNG
Absolute Maximum Ratings
Symbol
Description
IRFS634
VDSS VDGR VGS
ID ID IDM IGM EAS IAS
Drain-Source Voltage (1)
Drain-Gate Voltage (RGS =1.
0MΩ) (1)
Gate-Source Voltage Drain Current –Continuous Tc=25°C Drain Current –Continuous Tc=100°C Drain Current - Pulsed (2) Gate Current - Pulsed Single Pulsed Avalanche Energy (3) Avalanche Current
25...
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